Self-heating effects in SOI MOSFET's and their measurement by small signal conductance techniques

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2240-2248

  Tenbroek, Bernard M ^a   Lee, Michael S L ^a   Redman White, William ^a   John T Bunyan, R ^a   Uren, Michael J ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL CIRCUITS; ELECTRIC RESISTANCE MEASUREMENT; FREQUENCY DOMAIN ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; TIME DOMAIN ANALYSIS; VLSI CIRCUITS;

GATE RESISTANCE MEASUREMENTS; GATE VOLTAGE; NOISE THERMOMETRY; SELF HEATING EFFECTS; SMALL SIGNAL CONDUCTANCE TECHNIQUE; THERMAL EXTRACTION TECHNIQUE;

MOSFET DEVICES;

EID: 0030379801     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544417     Document Type: Article

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