"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1675-1682

  Mercha, A ^a   Rafi J M ^a   Simoen, E ^a   Augendre, E ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Floating body effects; Generation lifetime; Kink effect; Lorentzian noise spectrum; Noise overshoot; Switch off transient; Transconductance peak

Indexed keywords

BAND STRUCTURE; CRYOGENICS; ELECTRON TUNNELING; GATES (TRANSISTOR); IMPACT IONIZATION; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; TRANSIENTS; ULTRATHIN FILMS;

KINK EFFECTS;

MOSFET DEVICES;

EID: 0041441251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814983     Document Type: Article

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