Low-frequency noise in Si1-xGex p-Channel metal oxide semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5290-5293

  Tsuchiya, Toshiaki ^a   Matsuura, Takashi ^b   Murota, Junichi ^b  

^a SHIMANE UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Heterostructure; Low frequency noise; MOSFET; SiGe

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; X RAY DIFFRACTION ANALYSIS;

HETEROSTRUCTURE INTERFACE; LOW FREQUENCY NOISE; SURFACE GENERATION CURRENT; TRAP DENSITY; ULTRACLEAN LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

MOSFET DEVICES;

EID: 0035456675     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5290     Document Type: Article

References (8)