Diagnostics of the quality of MOSFETs

Microelectronics Reliability

Volumn 36, Issue 7-8 SPEC. ISS., 1996, Pages 1107-1112

  Vandamme, E P ^a   Vandamme, L K J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SPURIOUS SIGNAL NOISE;

DEVICE CONTACT QUALITY; GENERATION RECOMBINATION NOISE; NOISE SPECTRA;

MOSFET DEVICES;

EID: 0030193740     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00059-5     Document Type: Article

References (8)

1. X. Li and L.K.J. Vandamme. Solid-St. Electron., 35 1471-1475, (1992).
2. Xiaosong Li, C. Barros, E.P. Vandamme, and L.K.J. Vandamme. Solid-St. Electron., 37 1853-1862, (1994).
3. E.P. Vandamme, L.K.J. Vandamme, C. Claeys, E. Simoen, and R.J. Schreutelkamp. Solid-St. Electron., 38 1893-1897, (1995).
4. T.G.M. Kleinpenning. IEEE Trans. Electron Devices, 37 2084-2089, (1990).
5. L.K.J. Vandamme and R.G.M. Penning de Vries. Solid-St. Electron., 28 1049-1056, (1985).
6. E. Simoen, P.I.L. Smeys, and C. Claeys. IEEE Trans. Electron Devices, 42 1972-1976, (1994).
7. J-M. Peransin, P. Vignaud, D. Rigaud, and L.K.J. Vandamme. IEEE Trans. Electron Devices, 37 2250-2253, (1990).
8. X. Li and L.K.J. Vandamme. Solid-St. Electron., 35 1477-1481, (1992).