On the flicker noise in submicron silicon MOSFETs

Solid-State Electronics

Volumn 43, Issue 5, 1999, Pages 865-882

  Simoen, E ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FLICKERING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON;

SUBMICRON DIMENSIONS;

MOSFET DEVICES;

EID: 0032678739     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00322-0     Document Type: Article

References (94)

1. Vandamme L.K.J. IEEE Trans. Electron Devices. 41:1994;2176.
2. Christensson S., Lundström I., Svensson C. Solid-State Electron. 11:1968;813.
3. Klaassen F.M. IEEE Trans. Electron Devices. 18:1971;887.
4. Fu H.-S., Sah C.-T. IEEE Trans. Electron Devices. 19:1972;273.
5. Jones B.K. IEEE Trans. Electron Devices. 41:1994;2188.
6. Maes H.E., Usmani S.H., Groeseneken G. J. Appl. Phys. 57:1985;4811.
7. Vandamme L.K.J., Penning de Vries R.G.M. Solid-State Electron. 28:1985;1049.
8. McWhorter A.L. In: Semiconductor surface physics. Philadelphia, University of Philadelphia Press, 1957. p. 207-28.
9. Hooge F.N. Phys. Lett. 29A:1969;139.
10. Hooge F.N., Kleinpenning T.G.M., Vandamme L.K.J. Rep. Prog. Phys. 44:1981;479.
11. Ghibaudo G., Roux-dit-Buisson O., Brini J. Phys. Stat. Sol. (a). 132:1992;501.
12. Hurley P.K., Moran S., Wall L., Mathewson A., Mason B. In: De Graaff H.C., Van Kranenburg H., editors. Proc. ESSDERC '95. Gif-sur-Yvette, France: Editions Frontières, 1995. p. 147-50.
13. Uren M.J., Kirton M.J. Adv. Phys. 38:1989;367.
14. Simoen E., Claeys C. Solid-State Electron. 39:1996;949.
15. Jayaraman R., Sodini C.G. IEEE Trans. Electron Devices. 36:1989;1773.
16. Reimbold G. IEEE Trans. Electron Devices. 31:1984;1190.
17. Surya C., Hsiang T.Y. Phys. Rev. B. 33:1986;4898.
18. Surya C., Hsiang T.Y. Solid-State Electron. 31:1988;959.
19. Dutta P., Horn P.M. Rev. Mod. Phys. 53:1981;497.
20. Celik Z., Hsiang T.Y. IEEE Trans. Electron Devices. 32:1985;2797.
21. Celik-Butler Z., Hsiang T.Y. Solid-State Electron. 30:1987;419.
22. Schulz M., Karmann A. Appl. Phys. A. 52:1991;104.
23. Simoen E., Claeys C. Appl. Phys. Lett. 66:1995;598.
24. Simoen E., Claeys C. J. Appl. Phys. 77:1995;910.
25. Fleetwood D.M., Meisenheimer T.L., Scofield J.H. IEEE Trans. Electron Devices. 41:1994;1953.
26. Fleetwood D.M. IEEE Trans. Nucl. Sci. 43:1996;779.
27. Jäntsch O., Borchert B. Solid-State Electron. 30:1987;1013.
28. Celik-Butler Z., Hsiang T.Y. IEEE Trans. Electron Devices. 35:1988;1651.
29. Villa S., De Geronimo G., Pacelli A., Lacaita A.L., Longoni A. In: Grünbacher H., editor. Proc. ESSDERC '97. Gif-sur-Yvette, France: Editions Frontières, 1997. p. 332-5.
30. Scofield J.H., Borland N., Fleetwood D.M. IEEE Trans. Electron Devices. 41:1994;1946.
31. Chang J., Abidi A.A., Viswanathan C.R. IEEE Trans. Electron Devices. 41:1994;1965.
32. Ghibaudo G., Roux O., Nguyen-Duc Ch., Balestra F., Brini J. Phys. Stat. Sol. (a). 124:1991;571.
33. Uren M.J., Day D.J., Kirton M.J. Appl. Phys. Lett. 47:1985;1195.
34. Kandiah K., Deighton M.O., Whiting F.B. J. Appl. Phys. 66:1989;937.
35. Simoen E., Dierickx B., Claeys C.L., Declerck G.J. IEEE Trans. Electron Devices. 39:1992;422.
36. Simoen E., Dierickx B., DeCanne B., Thoma F., Claeys C. Appl. Phys. A. 58:1994;353.
37. Roux Dit Buisson O., Ghibaudo G., Brini J. Solid-State Electron. 35:1992;1273.
38. Shi Z., Miéville J.-P., Dutoit M. IEEE Trans. Electron Devices. 41:1994;1161.
39. Tsai M.-H., Ma T.P., Hook T.B. IEEE Electron Device Lett. 15:1994;504.
40. Dierickx B., Simoen E. J. Appl. Phys. 71:1992;2029.
41. Bloom I., Nemirovsky Y. Appl. Phys. Lett. 58:1992;1664.
42. Hooge F.N. IEEE Trans. Electron Devices. 41:1994;1926.
43. Hooge F.N., Vandamme L.K.J. Phys. Lett. 66A:1978;315.
44. Wolters D.R., Zegers-van Duijnhoven A.T.A., Augur R. In: IEDM Tech. Dig. 1994. p. 177-80.
45. Wolters D.R., Zegers-van Duijnhoven A.T.A. Microelectron. Eng. 28:1995;167.
46. Surya C., Hsiang T.Y. Phys. Rev. B. 35:1987;6343.
47. Mikoshiba H. IEEE Trans. Electron Devices. 29:1982;965.
48. Mikoshiba H., Sakamoto M., Hokari Y. In: IEDM Tech. Dig. 1982. p. 662-5.
49. Ralls K.S., Skocpol W.J., Jackel L.D., Howard R.E., Fetter L.A., Epworth R.W., Tennant D.M. Phys. Rev. Lett. 52:1984;228.
50. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Electron Device Lett. 11:1990;90.
51. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans. Electron Devices. 37:1990;654.
52. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans. Electron Devices. 37:1990;1323.
53. Gross B.J., Sodini C.G. In: IEDM Tech. Dig., 1992. p. 881-4.
54. Ghibaudo G. Solid-State Electron. 30:1987;1037.
55. van der Ziel A. Solid-State Electron. 29:1986;29.
56. Mutoh N., Teranishi N. Solid-State Electron. 31:1988;1675.
57. Chang J., Viswanathan C.R. In: Musha T., Sato S., Yamamoto M., editors. Proc. of the 10th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations. Tokyo, Japan: Ohmsha Ltd., 1991. p. 245-8.
58. Fang Z.-H., Chovet A., Zhu Q.-P., Zhao J.-N. Sold-State Electron. 34:1991;327.
59. Zhu Y., Deen M.J., Kleinpenning T.G.M. J. Appl. Phys. 72:1992;5990.
60. Li X., Vandamme L.K.J. Solid-State Electron. 36:1993;1515.
61. Hafez I.M., Ghibaudo G., Balestra F. Solid-State Electron. 33:1990;1525.
62. Tsai M.-H., Ma T.-P. IEEE Trans. Electron Devices. 41:1994;2061.
63. Ghibaudo G., Roux O., Brini J. In: Musha T., Sato S., Yamamoto M., editors. Proc. of the 10th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations. Tokyo, Japan: Ohmsha Ltd., 1991. p. 229-32.
64. Müller H.H., Schulz M. J. Appl. Phys. 79:1996;4178.
65. Müller H.H., Schulz M. In: Claeys C., Simoen E., editors. Proc. of the 14th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations. Singapore: World Scientific, 1997. p. 195-200.
66. Simoen E., Claeys C. Appl. Phys. Lett. 65:1994;1946.
67. Simoen E., Claeys C. IEEE Trans. Electron Devices. 42:1995;1467.
68. Wong H., Cheng Y.C. J. Appl. Phys. 67:1990;863.
69. Morfouli P., McLarty P., Misra V., Hauser J., Wortman J.J., Ouisse T., Ghibaudo G. In: De Graaff H.C., Van Kranenburg H. , editors. Proc. ESSDERC '95. Gif-sur-Yvette, France: Editions Frontières, 1995. p. 313-6.
70. Jayaraman R., Yang W., Sodini C.G. In: IEDM Tech. Dig., 1986. p. 668-71.
71. Jayaraman R., Sodini C.G. IEEE Trans. Electron. Devices. 37:1990;305.
72. Gross B.J., Krisch K.S., Sodini C.G. IEEE Trans. Electron Devices. 38:1991;2036.
73. Liu Z.H., Krick J.T., Wann H.J., Ko P.K., Hu C., Cheng Y.C. In: IEDM Tech. Dig., 1992. p. 625-8.
74. Ma Z.J., Liu Z.H., Cheng Y.C., Ko P.K., Hu C. IEEE Trans. Electron Devices. 41:1994;2205.
75. Triantis D.P., Birbas A.N., Zimmerman J.J. J. Appl. Phys. 77:1995;6021.
76. Morfouli P., Ghibaudo G., Ouisse T., Vogel E., Hill W., Misra V., Wortman J.J. IEEE Electron Device Lett. 17:1996;395.
77. Surya C., Wang W., Fong W.K., Chan C.H., Lai P.T. Solid-State Electron. 39:1996;1577.
78. Alers G.B., Monroe D., Krisch K.S., Weir B.E., Chang A.M. In: Mat. Res. Soc. Symp. Proc., vol. 428, 1996. p. 311-5.
79. Alers G.B., Krisch K.S., Monroe D., Weir B.E., Chang A.M. Appl. Phys. Lett. 69:1996;2885.
80. Farmer K.R., Saletti R., Buhrman R.A. Appl. Phys. Lett. 52:1988;1749.
81. Neri B., Olivo P., Ricco B. Appl. Phys. Lett. 51:1987;2167.
82. Li X., Barros C., Vandamme E.P., Vandamme L.K.J. Solid-State Electron. 37:1994;1853.
83. Tsai C.Y.H., Gong J. IEEE Trans. Electron Devices. 35:1988;2373.
84. Li X., Vandamme L.K.J. Solid-State Electron. 35:1992;1471.
85. Cheng C.-H., Surya C. Solid-State Electron. 36:1993;475.
86. Jang S.-L. Solid-State Electron. 36:1993;899.
87. Jang S.-L., Chang P.-C. Solid-State Electron. 36:1993;1007.
88. Vandamme E.P., Vandamme L.K.J., Claeys C., Simoen E., Schreutelkamp R.J. Solid-State Electron. 38:1995;1893.
89. Vandamme E.P., Vandamme L.K.J. Microelectron. Reliab. 36:1996;1107.
90. Py M.A., Buehlmann H.-J. J. Appl. Phys. 80:1996;1583.
91. Lukyanchikova N., Petrichuk M.V., Garbar N., Simoen E., Claeys C. In: Grünbacher H., editor. Proc. ESSDERC '97. Gif-sur-Yvette, France: Editions Frontières, 1997. p. 368-71.
92. Lukyanchikova N., Petrichuk M.V., Garbar N., Simoen E., Claeys C. Appl. Phys. Lett. 71:1997;3874.
93. Miura H., Ikeda S., Suzuki N. In: IEDM Tech. Dig., 1996. p. 743-6.
94. Shin H.C., Hu C. Semicond. Sci. Technol. 11:1996;463.