Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1897-1903

  Chroboczek, J A ^a   Ghibaudo, G ^b  

^a ORANGE LABS   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL COMPLEXITY; COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISES (LFN); SOFTWARE PACKAGE SPICE;

MICROELECTRONICS;

EID: 0034325933     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00059-7     Document Type: Article

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