Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 3, 2000, Pages 345-353

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c KU Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRONIC DENSITY OF STATES; SIGNAL PROCESSING; SUBSTRATES; SURFACE PHENOMENA;

COULOMB BLOCKADE EFFECT; COULOMB ENERGY; RANDOM TELEGRAPH SIGNAL; SURFACE CHARGE DENSITY; SURFACE QUANTIZATION EFFECTS;

MOSFET DEVICES;

EID: 0034156133     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050058     Document Type: Article

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