On the origin of the LF noise in Si/Ge MOSFETs

Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 393-398

  Ghibaudo, Gérard ^a   Chroboczek, Jan ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b ORANGE LABS   (France)

Author keywords

1 f noise; LF noise; Model SiGe pMOSFET

Indexed keywords

OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

LOW FREQUENCY NOISE (LFN);

MOSFET DEVICES;

EID: 0036498393     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00112-5     Document Type: Article

References (11)

1. x pMOS transistors to 5 K
2. A revised model for carrier trapping-detrapping 1/f noise
3. x retrograded double quantum well p-type MOSFET
4. Effects of channel positioning on low frequency noise in Si/Ge MOSFETs
5. Hole confinement and its impact on low-frequency noise in SiGe pFETS on sapphire
6. Low frequency noise in SiGe p-channel MOSFETs designed for 0.13 μm technology
7. Experimental studies on 1/f noise
8. 1/f noise and germanium surface properties
9. Measurement and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range K
10. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
11. Improved analysis of low frequency noise in field effect MOS transistors