Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs

Journal De Physique. IV : JP

Volumn 12, Issue 3, 2002, Pages

  Camin, D V ^a   Colombo, C F ^a   Grassi, V ^a  

^a INFN SEZIONE DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER CONTROL SYSTEMS; CRYOSTATS; ELECTRON ENERGY LEVELS; HOLE TRAPS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SPECTROSCOPY; SPURIOUS SIGNAL NOISE; TEMPERATURE CONTROL; THERMAL EFFECTS;

LORENTZIAN NOISE COMPONENTS; LOW FREQUENCY NOISE; TEMPERATURE SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0036564154     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp420020033     Document Type: Conference Paper

References (17)

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