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Volumn 46, Issue 8, 1999, Pages 1725-1732

On the geometry dependence of the i// noise in CMOS compatible junction diodes

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; SUBSTRATES;

EID: 0033169523     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777163     Document Type: Article
Times cited : (11)

References (41)
  • 1
    • 0001377220 scopus 로고    scopus 로고
    • "Physical model for burs noise in semiconductor devices,"
    • vol. 13, p. 1055 1970.
    • S. T. Hsu, R. J. Whittier, and C. A. Mead, "Physical model for burs noise in semiconductor devices," Solid-State Electron., vol. 13, p. 1055 1970.
    • Solid-State Electron.
    • Hsu, S.T.1    Whittier, R.J.2    Mead, C.A.3
  • 2
    • 0015206176 scopus 로고    scopus 로고
    • "Physical origin of burst noise i transistors,"
    • vol. 14, p. 1237, 1971.
    • K. B. Cook, Jr. and A. J. Brodersen, "Physical origin of burst noise i transistors," Solid-State Electron., vol. 14, p. 1237, 1971.
    • Solid-State Electron.
    • Cook Jr., K.B.1    Brodersen, A.J.2
  • 3
    • 0015599921 scopus 로고    scopus 로고
    • "Effects of diffusion-induced dislocations on the exces low-frequency noise,"
    • 20, p 221, 1973.
    • M. Nishida, "Effects of diffusion-induced dislocations on the exces low-frequency noise," IEEE Trans. Electron Devices, vol. ED-20, p 221, 1973.
    • IEEE Trans. Electron Devices, Vol. ED
    • Nishida, M.1
  • 5
    • 0018039251 scopus 로고    scopus 로고
    • "Excess noise sources due to defects in forward biase junctions,"
    • vol. 21, p. 1425, 1978.
    • G. Blasquez, "Excess noise sources due to defects in forward biase junctions," Solid-State Electron., vol. 21, p. 1425, 1978.
    • Solid-State Electron.
    • Blasquez, G.1
  • 6
    • 0020704119 scopus 로고    scopus 로고
    • "Noise phenomena associated wit dislocations in bipolar transistors,"
    • vol. 26, p 109, 1983.
    • M. Mihaila and K. Amberiadis, "Noise phenomena associated wit dislocations in bipolar transistors," Solid-State Electron., vol. 26, p 109, 1983.
    • Solid-State Electron.
    • Mihaila, M.1    Amberiadis, K.2
  • 8
    • 0001468577 scopus 로고    scopus 로고
    • "Surface-state related I/ noise in p-n junctions and MOS transistors,"
    • vol. 12 p. 287, 1968.
    • S. T. Hsu, D. J. Fitzgerald, and A. S. Grove, "Surface-state related I/ noise in p-n junctions and MOS transistors," Appl. Phys. Lett., vol. 12 p. 287, 1968.
    • Appl. Phys. Lett.
    • Hsu, S.T.1    Fitzgerald, D.J.2    Grove, A.S.3
  • 9
    • 33846604522 scopus 로고    scopus 로고
    • "The surface recombination model of p-n diode flicke noise,"
    • vol. 48, p. 242, 1970.
    • A. van der Ziel, "The surface recombination model of p-n diode flicke noise," Physica, vol. 48, p. 242, 1970.
    • Physica
    • Van Der Ziel, A.1
  • 10
    • 24544459259 scopus 로고    scopus 로고
    • "I// noise is not a surface phenomenon,"
    • 29, p. 139, 1969.
    • F. N. Hooge, "I// noise is not a surface phenomenon," Phys. Lett., vol A-29, p. 139, 1969.
    • Phys. Lett., Vol A
    • Hooge, F.N.1
  • 11
    • 0018989259 scopus 로고    scopus 로고
    • "I// noise in p-n diodes,"
    • vol. 98B p. 289, 1980.
    • T. G. M. Kleinpenning, "I// noise in p-n diodes," Physica, vol. 98B p. 289, 1980.
    • Physica
    • Kleinpenning, T.G.M.1
  • 12
    • 84955018391 scopus 로고    scopus 로고
    • "I// noise in p-n junction diodes,"
    • vol 3, p. 176, 1985.
    • "I// noise in p-n junction diodes," J. Vac. Sci. Technol. A, vol 3, p. 176, 1985.
    • J. Vac. Sci. Technol. A
  • 14
    • 36449004545 scopus 로고    scopus 로고
    • "Impact of th substrate on the low-frequency noise of silicon n+p junction diodes
    • vol. 66, p. 2507, 1995.
    • E. Simoen, G. Bosman, J. Vanhellemont, and C. Claeys, "Impact of th substrate on the low-frequency noise of silicon n+p junction diodes, Appl. Phys. Lett., vol. 66, p. 2507, 1995.
    • Appl. Phys. Lett.
    • Simoen, E.1    Bosman, G.2    Vanhellemont, J.3    Claeys, C.4
  • 15
    • 0030872617 scopus 로고    scopus 로고
    • "Preamorphization induce defects and their effects on the electrical properties of shallow p+/ junctions,"
    • vol. 37, p. 53, 1997.
    • M. Minondo, J. Boussey, and G. Kamarinos, "Preamorphization induce defects and their effects on the electrical properties of shallow p+/ junctions," Microelectron. Reliab., vol. 37, p. 53, 1997.
    • Microelectron. Reliab.
    • Minondo, M.1    Boussey, J.2    Kamarinos, G.3
  • 16
    • 0031121496 scopus 로고    scopus 로고
    • "Influence of depth position of end-of-range defects o current-voltage and noise characteristics of shallow (p+n) junctions
    • vol. 36, p. 1999, 1997.
    • D. Alquier, B. Van Haaren, C. Bergaud, R. Plana, J. Graffeuil, an A. Martinez, "Influence of depth position of end-of-range defects o current-voltage and noise characteristics of shallow (p+n) junctions, Jpn. J. Appl. Phys., vol. 36, p. 1999, 1997.
    • Jpn. J. Appl. Phys.
    • Alquier, D.1    Van Haaren, B.2    Bergaud, C.3    Plana, R.4    Graffeuil, J.5    Martinez, A.A.6
  • 17
    • 0031170670 scopus 로고    scopus 로고
    • "Impac of silicon substrate, iron contamination and perimeter on saturatio current and noise in n+p diodes,"
    • vol. 41, p. 901 1997.
    • L. K. J. Vandamme, E. P. Vandamme, and J. J. Dobbelsteen, "Impac of silicon substrate, iron contamination and perimeter on saturatio current and noise in n+p diodes," Solid-State Electron., vol. 41, p. 901 1997.
    • Solid-State Electron.
    • Vandamme, L.K.J.1    Vandamme, E.P.2    Dobbelsteen, J.J.3
  • 18
    • 0000283961 scopus 로고    scopus 로고
    • "Impact of oxygen related extended defects on silicon diode characteristics,"
    • vol. 77, p. 5669, 1995.
    • J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, and C. Claeys "Impact of oxygen related extended defects on silicon diode characteristics," J. Appl. Phys., vol. 77, p. 5669, 1995.
    • J. Appl. Phys.
    • Vanhellemont, J.1    Simoen, E.2    Kaniava, A.3    Libezny, M.4    Claeys, C.5
  • 19
    • 0029291962 scopus 로고    scopus 로고
    • "Low-frequency noise i polysilicon emitter bipolar transistors,"
    • vol. 42, p. 720, 1995.
    • H. A. W. Markus and T. G. M. Kleinpenning, "Low-frequency noise i polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices vol. 42, p. 720, 1995.
    • IEEE Trans. Electron Devices
    • Markus, H.A.W.1    Kleinpenning, T.G.M.2
  • 21
    • 0030391897 scopus 로고    scopus 로고
    • "Impact of polysilicon emitter interfacial layer engineering on the I// noise of bipolar transistors,"
    • vol. 43, p 2261, 1996.
    • E. Simoen, S. Decoutere, A. Cuthbertson, C. L. Claeys, and L. Deferm "Impact of polysilicon emitter interfacial layer engineering on the I// noise of bipolar transistors," IEEE Trans. Electron Devices, vol. 43, p 2261, 1996.
    • IEEE Trans. Electron Devices
    • Simoen, E.1    Decoutere, S.2    Cuthbertson, A.3    Claeys, C.L.4    Deferm, L.5
  • 22
    • 0029344529 scopus 로고    scopus 로고
    • "Static and low-frequency noise characteristics of n+p junction diode fabricated in different silicon substrates,"
    • vol 10, p. 1002, 1995.
    • E. Simoen, J. Vanhellemont, A. L. P. Rotondaro, and C. Claeys "Static and low-frequency noise characteristics of n+p junction diode fabricated in different silicon substrates," Semicond. Sci. Technol, vol 10, p. 1002, 1995.
    • Semicond. Sci. Technol
    • Simoen, E.1    Vanhellemont, J.2    Rotondaro, A.L.P.3    Claeys, C.4
  • 23
    • 0030291335 scopus 로고    scopus 로고
    • "The low-frequency nois behavior of Si n+p junction diodes fabricated on (100) and 111 substrates,"
    • vol. 228, p. 219, 1996.
    • E. Simoen, J. Vanhellemont, and C. Claeys, "The low-frequency nois behavior of Si n+p junction diodes fabricated on (100) and (111 substrates," Physica B. vol. 228, p. 219, 1996.
    • Physica B.
    • Simoen, E.1    Vanhellemont, J.2    Claeys, C.3
  • 24
    • 0024482306 scopus 로고    scopus 로고
    • "Formulation of surface I// noise processes in bipola junction transistors and in p-n diodes in Hooge-type form,"
    • vol. 32, p. 91, 1989.
    • A van der Ziel, "Formulation of surface I// noise processes in bipola junction transistors and in p-n diodes in Hooge-type form," Solid-Stat Electron., vol. 32, p. 91, 1989.
    • Solid-Stat Electron.
    • Van Der Ziel, A.1
  • 25
    • 0021784606 scopus 로고    scopus 로고
    • "I// noise in bipolar transistors,"
    • vol. 18, p. 77, 1985.
    • C. T. Green and B. K. Jones, "I// noise in bipolar transistors," J. Phys D: Appl. Phys., vol. 18, p. 77, 1985.
    • J. Phys D: Appl. Phys.
    • Green, C.T.1    Jones, B.K.2
  • 27
    • 0025575637 scopus 로고    scopus 로고
    • "Identification of I// diffusion and recombination noise sources i bipolar transistors," in
    • 1990, p. 25.
    • S. Decoutere, L. Deferm, G. Vanhorebeek, C. Claeys, and G. Declerck "Identification of I// diffusion and recombination noise sources i bipolar transistors," in Tech. Dig. IEDM, 1990, p. 25.
    • Tech. Dig. IEDM
    • Decoutere, S.1    Deferm, L.2    Vanhorebeek, G.3    Claeys, C.4    Declerck, G.5
  • 28
    • 0027608465 scopus 로고    scopus 로고
    • "l// noise in n-p- GaAs/AlGaAs heterojunction bipolar transistors: Impact of intrinsi transistor and parasitic series resistance,"
    • vol. 40, p. 1148, 1993.
    • T. G. M. Kleinpenning and A. Holden, "l// noise in n-p- GaAs/AlGaAs heterojunction bipolar transistors: Impact of intrinsi transistor and parasitic series resistance," IEEE Trans. Electron Devices vol. 40, p. 1148, 1993.
    • IEEE Trans. Electron Devices
    • Kleinpenning, T.G.M.1    Holden, A.2
  • 30
    • 0030172294 scopus 로고    scopus 로고
    • "On the relationship betwee the bulk recombination lifetime and the excess I// noise in silicon p- Junction diodes,"
    • vol. 98, p. 961, 1996.
    • E. Simoen, J. Vanhellemont, and C. Claeys, "On the relationship betwee the bulk recombination lifetime and the excess I// noise in silicon p- junction diodes," Solid-State Commun., vol. 98, p. 961, 1996.
    • Solid-State Commun.
    • Simoen, E.1    Vanhellemont, J.2    Claeys, C.3
  • 31
    • 44949288837 scopus 로고    scopus 로고
    • "I// noise and generation-recombination processe at discrete levels in semiconductors,"
    • vol. 167, p. 201 1990.
    • N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, A. P. Sasciuk and D. I. Kropman, "I// noise and generation-recombination processe at discrete levels in semiconductors," Physica B, vol. 167, p. 201 1990.
    • Physica B
    • Lukyanchikova, N.B.1    Petrichuk, M.V.2    Garbar, N.P.3    Sasciuk, A.P.4    Kropman, D.I.5
  • 32
    • 0039404948 scopus 로고    scopus 로고
    • "New "universal" relation concerning I// noise
    • vol. 180, p. 285, 1993.
    • N. B. Lukyanchikova, "New "universal" relation concerning I// noise, Phys. Lett. A, vol. 180, p. 285, 1993.
    • Phys. Lett. A
    • Lukyanchikova, N.B.1
  • 33
    • 36449004978 scopus 로고    scopus 로고
    • "Extraction of the minorit carrier recombination lifetime from forward diode characteristics,"
    • vol. 66, p. 2894, 1995.
    • J. Vanhellemont, E. Simoen, and C. Claeys, "Extraction of the minorit carrier recombination lifetime from forward diode characteristics," Appl Phys. Lett., vol. 66, p. 2894, 1995.
    • Appl Phys. Lett.
    • Vanhellemont, J.1    Simoen, E.2    Claeys, C.3
  • 35
    • 0005089428 scopus 로고    scopus 로고
    • "Analysi of n+p silicon junction with varying substrate doping concentration made under ultraclean processing technology,"
    • vol. 81 p. 1270, 1997.
    • H. Aharoni, T. Ohmi, M. M. Oka, A. Nakada, and Y. Tamai, "Analysi of n+p silicon junction with varying substrate doping concentration made under ultraclean processing technology," J. Appl. Phys., vol. 81 p. 1270, 1997.
    • J. Appl. Phys.
    • Aharoni, H.1    Ohmi, T.2    Oka, M.M.3    Nakada, A.4    Tamai, Y.5
  • 37
    • 0032473239 scopus 로고    scopus 로고
    • "Accurate extractio of the diffusion current in silicon p-n junction diodes,"
    • vol. 72, p. 1054, 1998
    • E. Simoen, A. Czerwinski, C. Claeys, and J. Katcki, "Accurate extractio of the diffusion current in silicon p-n junction diodes," Appl. Phys. Lett. vol. 72, p. 1054, 1998
    • Appl. Phys. Lett.
    • Simoen, E.1    Czerwinski, A.2    Claeys, C.3    Katcki, J.4
  • 38
    • 0031295915 scopus 로고    scopus 로고
    • "Noise characterization of gated silicon p-n diodes," in
    • 14th Int. Conf. Nois Phys. Syst. 1/f Fluctuations, C. Claeys and E. Simoen, Eds. Singapore World Scientific, 1997, pp. 542-545.
    • F.-C. Hou, G. Bosnian, E. Simoen, and C. Claeys, "Noise characterization of gated silicon p-n diodes," in Proc. 14th Int. Conf. Nois Phys. Syst. 1/f Fluctuations, C. Claeys and E. Simoen, Eds. Singapore World Scientific, 1997, pp. 542-545.
    • Proc.
    • Hou, F.-C.1    Bosnian, G.2    Simoen, E.3    Claeys, C.4
  • 40
    • 0000299051 scopus 로고    scopus 로고
    • "Theory and experiment on the I//7 nois in p-channel metal-oxide-semiconductor field-effect transistors at lo drain bias,"
    • vol. 33, p. 4898, 1986.
    • C. Surya and T. Hsiang, "Theory and experiment on the I//7 nois in p-channel metal-oxide-semiconductor field-effect transistors at lo drain bias," Phys. Rev. B. vol. 33, p. 4898, 1986.
    • Phys. Rev. B.
    • Surya, C.1    Hsiang, T.2
  • 41
    • 0024732795 scopus 로고    scopus 로고
    • "A I// noise technique to extract th oxide trap density near the conduction band edge of silicon,"
    • vol. 36, p. 1773, 1989.
    • R. Jayaraman and C. G. Sodini, "A I// noise technique to extract th oxide trap density near the conduction band edge of silicon," IEE Trans. Electron Devices, vol. 36, p. 1773, 1989.
    • IEE Trans. Electron Devices
    • Jayaraman, R.1    Sodini, C.G.2


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