Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 449-451

  Lee, Hyeokjae ^a,b   Lee, Jong Ho ^a,c   Shin, Hyungsoon ^a,d   Park, Young June ^a,b   Min, Hong Shick ^b  

^a Seoul National University ^*

^b Seoul National University   (South Korea)

^c Wonkwang University   (South Korea)

^d Ewha Womans University   (South Korea)

Author keywords

Analog RF applications; Charge pumping; Low frequency noise; MOSFETs; SOI; STI

Indexed keywords

CHARGE CARRIERS; ELECTRIC FREQUENCY MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY;

INTERFACE EFFECTS; LOW FREQUENCY NOISE; POWER SPECTRAL DENSITY; SHALLOW TRENCH ISOLATION STRUCTURES;

ELECTRON DEVICE TESTING;

EID: 0035447846     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.944336     Document Type: Article

References (9)

1. Degradation characteristics of STI and MESA-isolated thin film SOI CMOS
2. Stress induced defect and transistor leakage for shallow trench isolated SOI
3. Threshold voltage dependence of LOCOS isolated thin film SOI NMOSFET on buried oxide thickness
4. Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices
5. A novel shallow trench isolation technology to control inverse narrow with effects on CMOS transistor
6. NMOS drive current reduction caused by transistor layout and trench isolation induced stress
7. Isolation edge effect depending on gate length of MOSFET's with various isolation structures
8. An anomalous device degradation of SOI devices with STI
9. Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's