Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films

IEEE Electron Device Letters

Volumn 17, Issue 8, 1996, Pages 395-397

  Morfouli, P ^b   Ghibaudo, G ^a,b   Ouisse, T ^b   Vogel, E ^c   Hill, W ^c   Misra, V ^c   McLarty, P ^c   Wortman, J J ^a,c  

^a IEEE

^b Lab Phys Composants S   (France)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON SCATTERING; FILM PREPARATION; GATES (TRANSISTOR); NITROGEN; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE; ULTRATHIN FILMS;

FLUCTUATIONS; NITRIDATION; OXYNITRIDE GATE FILMS; POLYSILICON GATE; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SILICON OXYNITRIDE FILMS; THERMAL OXIDE;

MOSFET DEVICES;

EID: 0030215177     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.511586     Document Type: Article

References (13)

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