Influence of fluorinated gate oxides on the low frequency noise of mos transistors under analog operation

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 472-475

  Brederlow, Ralf ^a,b   Weber, Werner ^a   Jurk, Reinhard ^a   Dahe, Claus ^a   Kessee, Sylvia ^a   Holz, Jürgen ^a   Sauert, Wolfgang ^a   Klein, Peter ^a   Lemaitre, Bernd ^a   Schmitt LandsiedeI, Doris ^b   Thewes, Roland ^a  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

ANALOG OPERATIONS; BIASING CONDITIONS; CIRCUIT OPERATION; GATE OXIDE; LOW-FREQUENCY NOISE; NMOSFETS; NOISE AMPLITUDE; NOISE PERFORMANCE;

ANALOG CIRCUITS;

EID: 84908215143     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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