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Volumn 45, Issue 12, 1998, Pages 2528-2536

Bulk defect induced low-frequency noise in n+-p silicon diodes

Author keywords

Charge carrier processes; Diodes; Semiconductor device noise; Trapping noise

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; HOLE TRAPS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

EID: 0032309647     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735731     Document Type: Article
Times cited : (19)

References (9)
  • 2
    • 24544459259 scopus 로고    scopus 로고
    • 1/f noise is no surface effect,"
    • vol. 29A, pp. 139-141, 1969.
    • F. N. Hooge, 1/f noise is no surface effect," Phys. Lett., vol. 29A, pp. 139-141, 1969.
    • Phys. Lett.
    • Hooge, F.N.1
  • 5
    • 0028550908 scopus 로고    scopus 로고
    • Charge transport and device parameters from noise measurement,"
    • vol. 41, pp. 2198-2204, 1994.
    • G. Bosman, Charge transport and device parameters from noise measurement," IEEE Trans. Electron Devices, vol. 41, pp. 2198-2204, 1994.
    • IEEE Trans. Electron Devices
    • Bosman, G.1
  • 6
    • 33747054884 scopus 로고    scopus 로고
    • On the electrical activity of oxygen related extended defects in silicon," Proc. Electrochem. Soc
    • vol. 94-10, pp. 670-683, 1994.
    • E. Simoen et al, On the electrical activity of oxygen related extended defects in silicon," Proc. Electrochem. Soc., vol. 94-10, pp. 670-683, 1994.
    • Et Al
    • Simoen, E.1
  • 7
    • 49949136852 scopus 로고    scopus 로고
    • Surface effects on p-n junctions: Characteristics of surface space-charge regions under nonequilibrium conditions,"
    • vol. 9, pp. 783-806, 1970.
    • A. S. Grove and D. J. Fitzgerald, Surface effects on p-n junctions: Characteristics of surface space-charge regions under nonequilibrium conditions," Solid-State Electron., vol. 9, pp. 783-806, 1970.
    • Solid-State Electron.
    • Grove, A.S.1    Fitzgerald, D.J.2
  • 8
    • 0014805588 scopus 로고    scopus 로고
    • Surface state related 1/f noise in p-n junctions,"
    • vol. 13, pp. 843-855, 1970.
    • S. T. Hsu, Surface state related 1/f noise in p-n junctions," Solid-State Electron., vol. 13, pp. 843-855, 1970.
    • Solid-State Electron.
    • Hsu, S.T.1
  • 9
    • 33747035415 scopus 로고    scopus 로고
    • Noise and admittance of the generation-recombination current involving SRH centers in the space-charge region of junction devices,"
    • 23, Nov. 1976. [10] C. T. Sah, Theory of low-frequency generation noise in junction-gate field-effect transistors," Proc. IEEE, vol. 52, pp. 795-814, July 1964.
    • K. M. van Vliet, Noise and admittance of the generation-recombination current involving SRH centers in the space-charge region of junction devices," IEEE Trans. Electron Devices, Vol. ED23, Nov. 1976. [10] C. T. Sah, Theory of low-frequency generation noise in junction-gate field-effect transistors," Proc. IEEE, vol. 52, pp. 795-814, July 1964.
    • IEEE Trans. Electron Devices, Vol. ED
    • Van Vliet, K.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.