메뉴 건너뛰기




Volumn 21, Issue 8, 2000, Pages 408-410

Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING SILICON; SUBSTRATES;

EID: 0034246456     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852966     Document Type: Article
Times cited : (11)

References (12)
  • 1
    • 0001447475 scopus 로고    scopus 로고
    • Metal silicides: Active elements of ULSI contacts
    • C. M. Osburn, J. Y. Tsai, and J. Sun, "Metal silicides: Active elements of ULSI contacts," J. Electron Mater., vol. 25, pp. 1725-1739, 1996.
    • (1996) J. Electron Mater. , vol.25 , pp. 1725-1739
    • Osburn, C.M.1    Tsai, J.Y.2    Sun, J.3
  • 5
    • 0001048988 scopus 로고
    • Anomalous current-voltage behavior in titanium-silicided shallow source/drain junctions
    • Aug.
    • J. Lin, S. Banerjee, J. Lee, and C. Teng, "Anomalous current-voltage behavior in titanium-silicided shallow source/drain junctions," J. Appl. Phys., vol. 68, pp. 1082-1087, Aug. 1990.
    • (1990) J. Appl. Phys. , vol.68 , pp. 1082-1087
    • Lin, J.1    Banerjee, S.2    Lee, J.3    Teng, C.4
  • 8
    • 84955018391 scopus 로고
    • 1 / f noise in p-n junction diodes
    • Jan./Feb.
    • T. G. M. Kleinpenning, "1 / f noise in p-n junction diodes," J. Vac. Sci. Technol. A, vol. 3, pp. 176-182, Jan./Feb. 1985.
    • (1985) J. Vac. Sci. Technol. A , vol.3 , pp. 176-182
    • Kleinpenning, T.G.M.1
  • 9
    • 0039404948 scopus 로고
    • New "universal" relation concerning 1 / f noise
    • N. B. Lukyanchikova, "New "universal" relation concerning 1 / f noise," Phys. Lett. A, vol. 180, pp. 285-288, 1993.
    • (1993) Phys. Lett. A , vol.180 , pp. 285-288
    • Lukyanchikova, N.B.1
  • 10
    • 33846604522 scopus 로고
    • The surface recombination model of p-n diode flicker noise
    • A. van der Ziel, "The surface recombination model of p-n diode flicker noise," Physica, vol. 48, pp. 242-246, 1970.
    • (1970) Physica , vol.48 , pp. 242-246
    • Van Der Ziel, A.1
  • 12
    • 0033902288 scopus 로고    scopus 로고
    • Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures
    • Apr.
    • E. Gaubas, E. Simoen, C. Claeys, and J. Vanhellemont, "Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures," Mater. Sci. Eng. B, vol. 73, pp. 1-6, Apr. 2000.
    • (2000) Mater. Sci. Eng. B , vol.73 , pp. 1-6
    • Gaubas, E.1    Simoen, E.2    Claeys, C.3    Vanhellemont, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.