Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1029-1035

  Pacelli, Andrea ^a   Villa, Stefano ^a   Lacaita, Andrea L ^a   Perron, Laura M ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SIGNAL NOISE MEASUREMENT;

SEMICONDUCTOR DEVICE NOISE;

MOSFET DEVICES;

EID: 0032687555     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760413     Document Type: Article

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