Low-frequency noise in proton damaged LDD MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1339-1346

  Hardy, Timothy ^b   Deen, M Jamal ^a,c   Murowinski, R M ^b  

^a IEEE   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHTLY-DOPED DRAIN (LDD) DEVICES;

CHARGE CARRIERS; CHARGE COUPLED DEVICES; IMAGE SENSORS; PROTON IRRADIATION; THERMAL NOISE;

MOSFET DEVICES;

EID: 0032675041     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772474     Document Type: Article

References (29)

1. J. Janesick, G. Soli, T. Elliot, and S. Collins, "The effects of proton damage on charge-coupled devices," Proc. SPIE, vol. 1447, pp. 87-108, 1991.
2. M. S. Robbins, T. Roy, and S. Watts, "Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source," in RADECS 91, IEEE Proc., pp. 327-332.
3. I. Zayer, I. Chapman, D. Duncan, G. Kelly, and K. Mitchell, "Results from proton damage tests on the Michelson Doppler imager CCD for SOHO," Proc. SPIE, vol. 1900, pp. 97-107, 1993.
4. A. D. Holland, "The effect of bulk traps in proton irradiated EEV CCD's," Nucl. Instrum. Methods Phys. Res. A, vol. 326, pp. 335-343, 1993.
5. C. Dale, P. Marshall, B. Cummings, L. Shamey, and A. Holland, "Displacement damage effects in mixed particle environments for shielded spacecraft CCD's," IEEE Trans. Nucl. Sci, vol. 40, pp. 1628-1637, June 1993.
6. I. H. Hopkins, G. Hopkinson, and B. Johlander, "Proton-induced charge transfer degradation in CCD's for near-room temperature applications," IEEE Trans. Nucl. Sci, vol. 41, pp. 1984-1991, June 1994.
7. T. Hardy, R. Murowinski, and M. J. Deen, "Charge transfer efficiency in proton damaged CCD's," IEEE Trans. Nucl. Sci., vol. 45, pp. 154-163, Feb. 1998.
8. D. Murata-Seawalt, J. D. Orbock, W. A. Delamere, W. Fowler, and M. M. Blouke, "Proton radiation effects on multiple-pinned phase CCD's," in Charge-Coupled Devices and Solid State Optical Sensors, Proc. SPIE, vol. 1242, pp. 84-93, 1990.
9. A. Holland, A. Holmes-Siedle, B. Johlander, and L. Adams, "Techniques for minimizing space proton damage in scientific charge-coupled devices," IEEE Trans. Nucl. Sci., vol. 38, pp. 1663-1670, June 1991.
10. R. Murowinski, G. Linzhuang, and M. J. Deen, "Effects of space radiation damage and temperature on the noise in CCD's and LDD MOS transistors," IEEE Trans. Nucl. Sci., vol. 40, pp. 288-294, Mar. 1993.
11. _, "Effects of space radiation damage and temperature on CCD noise for the Lyman FUSE mission," in Photonics for Space Environments, Proc. SPIE, vol. 1953, pp. 71-81, 1993.
12. A. van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986, p. 76.
13. _, Noise in Solid State Devices and Circuits. New York: Wiley, 1986, p. 121.
14. M. J. Deen, "Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes," Mater. Sci. Eng. B, vol. 20, pp. 207-213, 1993;
15. "Low frequency noise and excess currents due to trap-assisted tunneling in double barrier resonant tunneling diodes," in 23rd Europ. Solid-State Device Res. Conf. (ESSDERC'93), Grenoble, France, Sept. 13-16, 1993, pp. 355-358.
16. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 261.
17. M. J. Deen, J. I. Ilowski, and P. Yang, "Low frequency noise in polysilicon-emitter bipolar junction transistors," J. Appl. Phys., vol. 77, no. 12, pp. 6278-6288, June 15, 1995.
18. F. N. Hooge, "1/f noise sources," IEEE Trans. Electron Devices, vol. 41, pp. 1926-1935, Nov. 1994.
19. D. M. Fleetwood, P. S. Winokur, R. A. Reber, T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, "Effects of oxide traps, interface traps, and 'border traps' on metal-oxide-semiconductor devices," J. Appl. Phys., vol. 73, no. 10, pp. 5058-5074, 1993.
20. M. J. Deen and Y. Zhu, "1/f noise in n-channel MOSFET's at high temperatures," in AIP Conf. Proc. 285-Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices, P. H. Handel and A. L. Chung, Ed. New York: AIP Press, 1993, pp. 165-188.
21. K. Kandiah and F. B. Whiting, "Nonideal behavior of buried channel CCD's caused by oxide and bulk silicon traps," Nucl. Instrum. Methods Phys. Res. A, vol. 305, pp. 600-607, 1991.
22. H. Kim, M. M. Blouke, and D. L. Heidtmann, "Effects of transistor geometry on CCD output sensitivity," in Charge-Coupled Devices and Solid State Optical Sensors, Proc. SPIE, vol. 1242, pp. 195-204, 1990.
23. J. Ziegler, J. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids. New York: Pergamon, 1985.
24. P. Kolev, T. Hardy, M. J. Deen, and R. Murowinski, "The use of constant-resistance DLTS to study proton radiation damage in CCD output MOSFET's," in Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices, P. Rai-Choudhury, J. Benton, and D. Schroder, Eds. Pennington, NJ: The Electrochem. Soc. Press, 1997, vol. 97-12, 12 p.
25. _, "A new voltage transient technique for deep level studies in depletion-mode field-effect transistors," J. Electrochem. Soc., vol. 145, no. 9, pp. 3258-3264, 1998.
26. J. L. Benton and L. C. Kimerling, "Capacitance transient spectroscopy of trace contamination in silicon," J. Electrochem. Soc., vol. 129, pp. 2098-2102, 1982.
27. H. Kim and D. L. Heidtmann, "Characteristics of 1/f noise of the buried-channel charge-coupled device (CCD)," in Proc. SPIE, Optical Sensors and Electronic Photography, vol. 1071, pp. 66-74, 1989.
28. A. van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986, p. 19.
29. B. K. Jones, "Low-frequency noise spectroscopy," IEEE Trans. Electron Devices, vol. 41, pp. 2188-2197, Nov. 1994.