SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 26, Issue 31, 2014, Pages 5239-5273

Photosensitive graphene transistors

(4) Li, Jinhua a Niu, Liyong a Zheng, Zijian a Yan, Feng a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

field effect transistor; graphene; infrared; photodetector; terahertz

Indexed keywords

FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; INDUSTRIAL RESEARCH; INFRARED RADIATION; LIGHT SENSITIVE MATERIALS; OPTICAL COMMUNICATION; PHOTODETECTORS; PHOTONS; PHOTOSENSITIVITY; TRANSISTORS;

AMPLIFICATION FUNCTIONS; ENVIRONMENT MONITORING; GRAPHENE FIELD-EFFECT TRANSISTORS; HIGH FREQUENCY COMMUNICATION; HIGHLY SENSITIVE PHOTODETECTORS; TERA HERTZ; TRANSPARENT ELECTRONICS; TWO-DIMENSIONAL MATERIALS;

GRAPHENE;

GRAPHITE;

LIGHT; SEMICONDUCTOR; SYNTHESIS;

GRAPHITE; LIGHT; TRANSISTORS, ELECTRONIC;

EID: 84906215727 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201400349 Document Type: Review

Times cited : (305)

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