Graphene synthesis on cubic SiC/Si wafers. Perspectives for mass production of graphene-based electronic devices

Nano Letters

Volumn 10, Issue 3, 2010, Pages 992-995

  Aristov, Victor Yu ^a,b   Urbanik, Grzegorz ^a   Kummer, Kurt ^c   Vyalikh, Denis V ^c   Molodtsova, Olga V ^a   Preobrajenski, Alexei B ^d   Zakharov, Alexei A ^d   Hess, Christian ^a   Hänke, Torben ^a   Büchner, Bernd ^a   Vobornik, Ivana ^e   Fujii, Jun ^e   Panaccione, Giancarlo ^e   Ossipyan, Yuri A ^b   Knupfer, Martin ^a  

^a IFW DRESDEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d MAX IV LABORATORY   (Sweden)

^e LABORATORIO TASC   (Italy)

Author keywords

Cubic SiC surface; Graphene layer; Synthesis

Indexed keywords

ECONOMICAL FABRICATION; ELECTRONIC DEVICE; ELECTRONIC TECHNOLOGIES; GRAPHENE LAYER; GRAPHENE LAYERS; GRAPHENE SHEETS; GRAPHITE LAYERS; MASS PRODUCTION; PREPARATION PROCEDURES; SUBSTRATE MATERIAL; SYNTHESIS METHOD;

ELECTRONIC PROPERTIES; GRAPHENE; MACHINE TOOLS; PRODUCTION ENGINEERING; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES; THERMOELECTRIC EQUIPMENT;

GRAPHITE;

GRAPHITE; INORGANIC COMPOUND; NANOMATERIAL; SILICON; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CARBON COMPOUNDS, INORGANIC; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SILICON COMPOUNDS; SURFACE PROPERTIES;

EID: 77949426482     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl904115h     Document Type: Article

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