Nanometer size field effect transistors for terahertz detectors

Nanotechnology

Volumn 24, Issue 21, 2013, Pages

  Knap, W ^a,b   Rumyantsev, S ^a,c   Vitiello, M S ^d   Coquillat, D ^a   Blin, S ^e   Dyakonova, N ^a   Shur, M ^c   Teppe, F ^a   Tredicucci, A ^d   Nagatsuma, T ^f  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d SCUOLA NORMALE SUPERIORE   (Italy)

^e UNIVERSITÉ MONTPELLIER II   (France)

^f OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND TERAHERTZ; FREQUENCY MULTIPLIER; NANO-METER SCALE; NANOMETER SIZE; TERAHERTZ DETECTORS; TERAHERTZ RADIATION;

TERAHERTZ WAVE DETECTORS;

FIELD EFFECT TRANSISTORS;

EQUIPMENT; EQUIPMENT DESIGN; NANOTECHNOLOGY; RADIOMETRY; REVIEW; SEMICONDUCTOR; TERAHERTZ IMAGING; TERAHERTZ SPECTROSCOPY; TRANSDUCER;

EQUIPMENT DESIGN; NANOTECHNOLOGY; RADIOMETRY; SEMICONDUCTORS; TERAHERTZ IMAGING; TERAHERTZ SPECTROSCOPY; TRANSDUCERS; TRANSISTORS, ELECTRONIC;

EID: 84876888295     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/21/214002     Document Type: Article

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