Electronic confinement and coherence in patterned epitaxial graphene

Science

Volumn 312, Issue 5777, 2006, Pages 1191-1196

  Berger, Claire ^a,b   Song, Zhimin ^a   Li, Xuebin ^a   Wu, Xiaosong ^a   Brown, Nate ^a   Naud, Cécile ^b   Mayou, Didier ^b   Li, Tianbo ^a   Hass, Joanna ^a   Marchenkov, Alexei N ^a   Conrad, Edward H ^a   First, Phillip N ^a   De Heer, Walt A ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b CNRS   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); NANOTECHNOLOGY; QUANTUM ELECTRONICS; SILICON CARBIDE; VACUUM;

ELECTRONICALLY COHERENT DEVICES; EPITAXIAL GRAPHENE; NANOLITHOGRAPHY METHODS; SILICON CARBIDE INTERFACE;

GRAPHITE;

CARBON NANOTUBE; GRAPHENE; GRAPHITE; SILICON CARBIDE; UNCLASSIFIED DRUG;

CARBON; CRYSTAL; GRAPHITE; GRAPHITIZATION;

ARTICLE; ATOMIC FORCE MICROSCOPY; CALCULATION; CRYSTAL; EEL; ELECTRON; ENERGY; MATHEMATICAL ANALYSIS; NANOLITHOGRAPHY; NANOTECHNOLOGY; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; STANDARD; VACUUM;

EID: 33744469329     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1125925     Document Type: Article

References (36)

1. C. Berger et al., J. Phys. Chem. B 108, 19912 (2004).
2. K. S. Novoselov et al., Nature 438, 197 (2005).
3. Y. B. Zhang, Y. W. Tan, H. L. Stormer, P. Kim, Nature 438, 201 (2005).
4. T. Ando, T. Nakanishi, R. Saito, J. Phys. Soc. Jpn. 67, 2857 (1998).
5. P. R. Wallace, Phys. Rev. 71, 622 (1947).
6. B. T. Kelly, Physics of Graphite (Applied Science, London, 1981).
7. 0ℏk - k(K), where k is the wave vector.
8. perp = n/D, where D is the diameter.
9. I. Forbeaux, J. M. Themlin, J. M. Debever, Phys. Rev. B 58, 16396 (1998).
10. A. Charrier et al., J. Appl. Phys. 92, 2479 (2002).
11. Cree Inc., High Purity, R Grade 4H SiC.
12. V. Ramachandran, M. F. Brady, A. R. Smith, R. M. Feenstra, D. W. Greve, J. Electron. Mater. 27, 308 (1998).
13. J. Hass et al., arxiv.org/abs/cond-mat/0604206 (2006).
14. E. Rollings et al., arxiv.org/abs/cond-mat/0512226 (2005).
15. P. B. Visscher, L. M. Falicov, Phys. Rev. B 3, 2541 (1971).
16. Y. B. Zhang, J. P. Small, W. E. S. Amori, P. Kim, Phys. Rev. Lett. 94, 176803 (2005).
17. W. Fujita, K. Wakabayashi, K. Nakada, K. Kusakabe, J. Phys. Soc. Jpn. 65, 1920 (1996).
18. K. Nakada, M. Fujita, G. Dresselhaus, M. S. Dresselhaus, Phys. Rev. B 54, 17954 (1996).
19. K. Wakabayashi, Phys. Rev. B 64, 12 (2001).
20. C. W. J. Beenakker, H. van Houten, Quantum Transport in Semiconductor Nanostructures, vol. 44 (Academic Press, New York, 1991), and reference therein (also available at arxiv.org/abs/cond-mat/0412664).
21. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge Univ. Press, Cambridge, 1995).
22. J. J. Lin, J. P. Bird, J. Phys. Condens. Matter 14, R501 (2002).
23. S. G. Sharapov, V. P. Gusynin, H. Beck, Phys. Rev. B 69, 075104 (2004).
24. D. E. Soule, J. W. McClure, L. B. Smith, Phys. Rev. A. 134, A453 (1964).
25. D. E. Soule, Phys. Rev. 1, 708 (1958).
26. I. A. Luk'yanchuk, Y. Kopelevich, Phys. Rev. Lett. 93, 166402 (2004).
27. K. F. Berggren, G. Roos, H. van Houten, Phys. Rev. B 37, 10118 (1988).
28. effn for the energies at the bottom of band n.
29. N. M. R. Peres, A. H. Castro Neto, F. Guinea, arxiv.org/abs/cond-mat/ 0603771 (2006).
30. We follow the convention of indexing the MR peaks (24, 25) rather than the valleys.
31. I. M. Lifshitz, A. M. Kosevich, Sov. Phys. JETP 2, 636 (1956).
32. B. L. Altshuler, A. G. Aronov, Eds., Electron-Electron Interactions in Disordered Systems (Elsevier, Amsterdam, 1985).
33. P. Poncharal, C. Berger, Y. Yi, Z. L. Wang, W. A. de Heer, J. Phys. Chem. B 106, 12104 (2002).
34. K. S. Novoselov et al., Science 306, 666 (2004).
35. N. M. R. Peres, F. Guinea, A. H. Castro Neto, arxiv.org/abs/cond-mat/ 0512091 (2005).
36. Supported by NSF grant 0404084, U.S. Department of Energy grant DE-FG02-02ER45956, a grant from Intel Research Corporation, and a USA-France travel grant from CNRS. We acknowledge discussions with J. D. Meindl and help from the staff of the Georgia Tech MIRC clean room. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the research sponsors.