Tunable photoresponse of epitaxial graphene on SiC

Applied Physics Letters

Volumn 103, Issue 1, 2013, Pages

  Sun, Rujie ^a   Zhang, Ye ^a   Li, Kang ^b   Hui, Chao ^a   He, Ke ^b   Ma, Xucun ^b   Liu, Feng ^a  

^a UNIVERSITY OF UTAH   (United States)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; EPITAXIAL GRAPHENE; HIGH TUNABILITY; LASER ILLUMINATION; PHOTOCURRENT SIGNALS; PHOTORESPONSE MEASUREMENTS; PHOTORESPONSIVITY; PLANAR CONFIGURATIONS;

ELECTRIC FIELDS; EPITAXIAL GROWTH; SILICON CARBIDE;

GRAPHENE;

EID: 84880263748     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812986     Document Type: Article

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24. See supplementary material at http://dx.doi.org/10.1063/1.4812986 E-APPLAB-103-081327 for the photoresponse of a control SiC device, device band diagram, and the photoresponse of a few-layer graphene flake device.