Gate dependent photocurrents at a graphene p-n junction

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  Peters, Eva C ^a   Lee, Eduardo J H ^a   Burghard, Marko ^a   Kern, Klaus ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DOPING; DIRAC POINT; ELECTRONIC CHARACTERISTICS; GATE DEPENDENCE; GATE VOLTAGES; GRAPHENE SHEETS; LEVEL DIFFERENCE; P-N JUNCTION; PHOTO-THERMOELECTRIC; PHOTOCURRENT SIGNALS;

DOPING (ADDITIVES); ELECTRIC FIELDS; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM WELLS;

GRAPHENE;

EID: 78249256080     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3505926     Document Type: Article

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25. n) reverses sign in the region between the Dirac points of the p- and n-type regions.