Graphene-based devices in terahertz science and technology

Journal of Physics D: Applied Physics

Volumn 45, Issue 30, 2012, Pages

  Otsuji, T ^a,e   Boubanga Tombet, S A ^a   Satou, A ^a,e   Fukidome, H ^a,e   Suemitsu, M ^a,e   Sano, E ^b,e   Popov, V ^c   Ryzhii, M ^d,e   Ryzhii, V ^a,e  

^a TOHOKU UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^d UNIVERSITY OF AIZU   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CRYSTALS; CRYSTALLOGRAPHIC CHARACTERIZATION; ELECTRICALLY PUMPED; ELECTRONS AND HOLES; GRAPHENE DEVICES; HETEROEPITAXIAL; LINEAR ENERGY; NON-EQUILIBRIUM CARRIERS; OPTICAL RESPONSE; OPTOELECTRONIC PROPERTIES; PLANAR SHEETS; RECOMBINATION DYNAMICS; SCIENCE AND TECHNOLOGY; TERA HERTZ; TERAHERTZ APPLICATIONS; TERAHERTZ DYNAMICS; TERAHERTZ LASERS; TERAHERTZ RANGE;

DYNAMICS; EPITAXIAL GROWTH; INFRARED LASERS; TECHNOLOGY;

GRAPHENE;

EID: 84863959270     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/30/303001     Document Type: Review

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