Contact and edge effects in graphene devices

Nature Nanotechnology

Volumn 3, Issue 8, 2008, Pages 486-490

  Lee, Eduardo J H ^a   Balasubramanian, Kannan ^a   Weitz, Ralf Thomas ^a   Burghard, Marko ^a   Kern, Klaus ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GRAPHENE;

ELECTRICAL CONTACTS; ELECTRICAL POTENTIAL; ELECTRICAL TRANSPORT; ELECTRON TRANSPORT; LOW CARRIER DENSITY; RELATIVISTIC PARTICLES; SCANNING PHOTOCURRENT MICROSCOPIES; SEMICONDUCTOR PHYSICS;

GRAPHENE DEVICES;

METAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; DEVICE; ELECTRIC POTENTIAL; ELECTRICITY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 49449096174     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.172     Document Type: Article

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