Terahertz and infrared detectors based on graphene structures

Infrared Physics and Technology

Volumn 54, Issue 3, 2011, Pages 302-305

  Ryzhii, Victor ^a,b   Ryzhii, Maxim ^a,b   Ryabova, Nadezhda ^a,b   Mitin, Vladimir ^c   Otsuji, Taiichi ^b,d  

^a UNIVERSITY OF AIZU   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c the State University of New York   (United States)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Dark current; Detectivity; Detector; Graphene; Photocurrent; Responsivity

Indexed keywords

DETECTIVITY; DEVICE MODELS; HIGH QUANTUM EFFICIENCY; INTERBAND; LAYER STRUCTURES; P-I-N JUNCTIONS; RESPONSIVITY; TERA HERTZ; THERMOGENERATION;

DARK CURRENTS; GRAPHENE; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

DETECTORS;

EID: 79955031859     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2010.12.034     Document Type: Conference Paper

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