Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 2119-2121

  Otsuji, Taiichi ^a   Hanabe, Mitsuhiro ^a   Ogawara, Osamu ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; LASER BEAMS; LIGHT SOURCES; NATURAL FREQUENCIES; NONLINEAR SYSTEMS; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE;

LOAD RESISTORS; PLASMA RESONANT INTENSITY; PLASMA WAVE RESONANCE; ULTRATHIN ORGANIC FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 5444265960     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1792377     Document Type: Article

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