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The electron density of the Si back gate will also be modulated by electrical gating. It will also contribute to the IR reflectivity change and is described by Drude free-carrier response. However, its contribution is more than an order of magnitude smaller than that of graphene and remains a constant at different dc gate voltages
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The electron density of the Si back gate will also be modulated by electrical gating. It will also contribute to the IR reflectivity change and is described by Drude free-carrier response. However, its contribution is more than an order of magnitude smaller than that of graphene and remains a constant at different dc gate voltages.
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We thank S. Louie and Y. Li for helpful discussions. This work was supported by the Office of Basic Energy Sciences, U.S. Department of Energy, under contract DE-AC03-76SF0098. F.W. and Y.Z. acknowledge the support from the Miller Institute for Miller research fellowships, and C.T. acknowledges support from an NSF grant through Water CAMPWS CTS-0120978
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We thank S. Louie and Y. Li for helpful discussions. This work was supported by the Office of Basic Energy Sciences, U.S. Department of Energy, under contract DE-AC03-76SF0098. F.W. and Y.Z. acknowledge the support from the Miller Institute for Miller research fellowships, and C.T. acknowledges support from an NSF grant through Water CAMPWS CTS-0120978.
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