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Volumn 20, Issue 3, 2011, Pages 567-582
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Non-linear plasma oscillations in semiconductor and graphene channels and application to the detection of terahertz signals
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Author keywords
plasma resonance; terahertz detection
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Indexed keywords
CONDUCTION CHANNEL;
CUT-OFF;
DENSITY OSCILLATIONS;
DETECTOR RESPONSE;
DIFFUSION CURRENTS;
ELECTRON FLUID;
ELECTRON-HOLE LIQUID;
ELECTRONS AND HOLES;
ENERGY BALANCE EQUATIONS;
EXTERNAL PERTURBATIONS;
FERMI TEMPERATURE;
GAAS;
GATE VOLTAGES;
HIGH-MOBILITY SEMICONDUCTORS;
HYDRODYNAMIC EQUATIONS;
HYDRODYNAMIC MODEL;
LOW TEMPERATURES;
NON-LINEAR RESPONSE;
NUMERICAL RESULTS;
OSCILLATION FREQUENCY;
PLASMA RESONANCE;
PLASMA RESONATORS;
POTENTIAL APPLICATIONS;
QUALITY FACTORS;
RESONANCE RESPONSE;
ROOM TEMPERATURE;
ROOM TEMPERATURE MOBILITY;
SEMICONDUCTOR CHANNELS;
SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;
SHORT CHANNELS;
SHORT-CHANNEL DEVICES;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT;
TERAHERTZ DETECTION;
TERAHERTZ RADIATION;
TERAHERTZ SIGNALS;
TIME-HARMONIC;
TRANSPORT COEFFICIENT;
BOLTZMANN EQUATION;
CONTROL NONLINEARITIES;
DETECTORS;
ELECTROMAGNETIC WAVE EMISSION;
ELECTRON GAS;
ELECTRON MOBILITY;
ELECTRONS;
GALLIUM NITRIDE;
GRAPHENE;
HYDRODYNAMICS;
PLASMA OSCILLATIONS;
PLASMA WAVES;
QUALITY CONTROL;
RESONANCE;
RESONATORS;
TEMPERATURE DISTRIBUTION;
TERAHERTZ WAVE DETECTORS;
TERAHERTZ WAVES;
TRANSISTORS;
VISCOSITY;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 84555186917
PISSN: 01291564
EISSN: None
Source Type: Journal
DOI: 10.1142/S0129156411006866 Document Type: Article |
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Times cited : (27)
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References (29)
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