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Volumn 12, Issue 1, 2012, Pages 96-101

Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors

Author keywords

field effect transistors; nanophotonic devices; Nanowires; terahertz

Indexed keywords

BUILDING BLOCKES; DETECTION MECHANISM; DRAIN VOLTAGE; EFFECTIVE MASS; FUTURE GENERATIONS; HIGH MOBILITY; HIGH-SENSITIVITY; HIGHER FREQUENCIES; III-V COMPOUNDS; INAS; MULTI-PIXEL ARRAYS; NANOELECTRONIC DEVICES; NANOPHOTONIC DEVICES; NON-LINEARITY; PHOTOVOLTAICS; RESPONSIVITY; ROOM TEMPERATURE; SEMICONDUCTOR NANOWIRE; SILICON INTEGRATION; SOURCE-DRAIN; TECHNOLOGY IMPROVEMENT; TERA HERTZ; TERAHERTZ DETECTION; TERAHERTZ DETECTORS; TERAHERTZ RADIATION; TRANSFER CHARACTERISTICS; WIDEBAND ANTENNA;

EID: 84855763384     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2030486     Document Type: Article
Times cited : (188)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.