SCOPUS 정보 검색 플랫폼

Journal of the American Chemical Society

Volumn 133, Issue 9, 2011, Pages 2816-2819

Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper

(8) Li, Xuesong a Magnuson, Carl W a Venugopal, Archana b Tromp, Rudolf M c Hannon, James B c Vogel, Eric M b Colombo, Luigi d Ruoff, Rodney S a

a The University of Texas at Austin (United States)

b The University of Texas at Dallas (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

d TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND INTENSITY; CRYSTALLOGRAPHIC ORIENTATIONS; LOW-ENERGY ELECTRON MICROSCOPY ANALYSIS; ROOM TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GRAPHENE; METHANE; MONOLAYERS; RAMAN SPECTROSCOPY;

SINGLE CRYSTALS;

COPPER; GRAPHENE; METHANE;

ARTICLE; CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR; MEASUREMENT; MONOLAYER CULTURE; PRESSURE; RAMAN SPECTROMETRY; ROOM TEMPERATURE; VAPOR;

EID: 79952257832 PISSN: 00027863 EISSN: 15205126 Source Type: Journal
DOI: 10.1021/ja109793s Document Type: Article

Times cited : (1221)

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