Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Shieh, Jia Min ^a,b   Yu, Wen Chien ^a   Huang, Jung Y ^b   Wang, Chao Kei ^a   Dai, Bau Tong ^a   Jhan, Huang Yan ^b   Hsu, Chih Wei ^b   Kuo, Hao Chung ^b   Yang, Fu Liang ^a   Pan, Ci Ling ^b,c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT AMPLIFICATION; GATE STRUCTURE; INTERFACE STATE; MESOPOROUS SILICAS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NEAR INFRARED; NEAR INFRARED LIGHT; OXIDE LAYER; PHOTORESPONSIVITY; POLYCRYSTALLINE; POLYCRYSTALLINE-SI; SI NANOCRYSTAL; SILICON QUANTUM DOTS; SILICON-BASED;

AMPLIFICATION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; INFRARED DEVICES; MOSFET DEVICES; NANOCRYSTALS; OPTOELECTRONIC DEVICES; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649182888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3156806     Document Type: Article

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