Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Ryzhii, V ^a,b   Ryzhii, M ^a,b   Mitin, V ^c   Otsuji, T ^b,d  

^a UNIVERSITY OF AIZU   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c the State University of New York   (United States)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTIVITY; DEVICE MODELS; GEOMETRICAL PARAMETERS; GRAPHENE LAYERS; HIGH QUANTUM EFFICIENCY; IR DETECTOR; LAYER STRUCTURES; MODULATION FREQUENCIES; P-I-N JUNCTIONS; PHOTO DETECTION; RESPONSIVITY; ROOM TEMPERATURE; TERA HERTZ; TERAHERTZ RANGE; THERMOGENERATION RATES;

DETECTORS; GRAPHENE; GRAPHITE; OPTOELECTRONIC DEVICES; SOLIDS; TERAHERTZ WAVES;

PHOTODETECTORS;

EID: 77949711200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3327441     Document Type: Article

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