Mid-infrared HgTe/As2S3 field effect transistors and photodetectors

Advanced Materials

Volumn 25, Issue 1, 2013, Pages 137-141

  Lhuillier, Emmanuel ^a   Keuleyan, Sean ^a   Zolotavin, Pavlo ^a   Guyot Sionnest, Philippe ^a  

^a UNIVERSITY OF CHICAGO   (United States)

Author keywords

As2S3; colloidal quantum dot; field effect transistors; HgTe; inorganic matrix; mid IR; photodetection

Indexed keywords

COLLOIDAL QUANTUM DOTS; DETECTIVITY; HGTE; INORGANIC MATRICES; MID-IR; MIDINFRARED; PHOTO DETECTION; RESPONSIVITY;

ELECTRONIC PROPERTIES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 84872010180     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201203012     Document Type: Article

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