Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Pitanti, A ^a   Coquillat, D ^b   Ercolani, D ^a   Sorba, L ^a   Teppe, F ^b   Knap, W ^b   De Simoni, G ^c   Beltram, F ^a,c   Tredicucci, A ^a   Vitiello, M S ^a  

^a ISTITUTO NANOSCIENZE CNR   (Italy)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c CENTER FOR NANOTECHNOLOGY INNOVATION NEST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; INAS; NANOWIRE DETECTOR; NOISE EQUIVALENT POWER; PHOTODETECTED SIGNALS; PHYSICAL EFFECTS; RESPONSIVITY; THRESHOLD GATES;

FIELD EFFECT TRANSISTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; THRESHOLD LOGIC;

NANOWIRES;

EID: 84867520120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757005     Document Type: Article

References (16)

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13. In our particular case, the impedance is 60 M Ω.
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