Nonresonant detection of terahertz radiation in field effect transistors

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9346-9353

  Knap, W ^a   Kachorovskii, V ^a   Deng, Y ^a   Rumyantsev, S ^a   Lu J Q ^a   Gaska, R ^a   Shur, M S ^a   Simin, G ^b   Hu, X ^b   Khan, M Asif ^b   Saylor, C A ^c   Brunel, L C ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

^c FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; GAAS/ALGAAS; GATE VOLTAGES; GATE-LEAKAGE CURRENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; NON-RESONANT DETECTION; PHOTORESPONSES; SUBTERAHERTZ; TERAHERTZ RADIATION; THEORETICAL MODELS; THEORETICAL STUDY;

PHYSICAL PROPERTIES; PHYSICS;

FIELD EFFECT TRANSISTORS;

EID: 0036607409     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468257     Document Type: Article

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