Analysis of graphene nanoribbons as a channel material for field-effect transistors

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Obradovic, B ^a   Kotlyar, R ^a   Heinz, F ^a   Matagne, P ^a   Rakshit, T ^a   Giles, M D ^a   Stettler, M A ^a   Nikonov, D E ^b  

^a INTEL CORPORATION   (United States)

^b Intel Corporation   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; CHIRALITY; ELECTRON BAND STRUCTURE; GRAPHENE NANORIBBONS;

BAND STRUCTURE; CARBON NANOTUBES; CARRIER CONCENTRATION; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; GRAPHITE;

NANOSTRUCTURED MATERIALS;

EID: 33646685492     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191420     Document Type: Article

References (6)

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