Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons

Advanced Materials

Volumn 23, Issue 45, 2011, Pages 5419-5424

  Chitara, Basant ^a   Panchakarla, L S ^b   Krupanidhi, S B ^a   Rao, C N R ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

Graphene nanoribbons; Photodetectors; Reduced graphene oxide; Responsivity

Indexed keywords

GRAPHENE NANORIBBONS; INFRARED PHOTODETECTOR; LIGHT EMITTING DEVICES; PHOTORESPONSES; RESPONSIVITY; TIME-RESOLVED;

INFRARED DETECTORS; PHOTODETECTORS; ULTRAFAST LASERS;

GRAPHENE;

CARBON NANOTUBE; FORMAMIDE DERIVATIVE; GRAPHITE; N,N DIMETHYLFORMAMIDE; N,N-DIMETHYLFORMAMIDE; OXIDE;

ARTICLE; CHEMISTRY; INFRARED RADIATION; NANOTECHNOLOGY; OXIDATION REDUCTION REACTION;

FORMAMIDES; GRAPHITE; INFRARED RAYS; NANOTECHNOLOGY; NANOTUBES, CARBON; OXIDATION-REDUCTION; OXIDES;

EID: 82455212389     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201101414     Document Type: Article

References (50)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666.
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, Nature 2005, 438, 197.
3. Y. Zhang, J. W. Tan, H. L. Stormer, P. Kim, Nature 2005, 438, 201.
4. P. Avouris, Z. Chen, V. Perebeinos, Nat. Nanotechnol. 2007, 2, 605.
5. A. K. Geim, K. S. Novoselov, Nat. Mater. 2007, 6, 183.
6. C. N. R. Rao, K. Biswas, K. S. Subrahmanyam, A. Govindaraj, J. Mater. Chem. 2009, 19, 2457.
7. C. N. R. Rao, A. K. Sood, K. S. Subrahmanyam, A. Govindaraj, Angew. Chem. Int. Ed. 2009, 48, 7752.
8. F. Wang, Y. Zhang, C. Tian, C. Girit, A. Zett, M. Crommie, Y. R. Shen, Science 2008, 320, 206.
9. R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres, A. K. Geim, Science 2008, 320, 1308.
10. F. Xia, M. Thomas, Y. Lin, A. Valdes-Garcia, P. Avouris, Nat. Nanotechnol. 2009, 4, 839.
11. M. Thomas, F. Xia, P. Avouris, Nat. Photon. 2010, 4, 297.
12. D. W. Boukhvalov, M. I. Katsnelson, J. Phys.: Condens. Matter 2009, 21, 344205.
13. M. Segal, Nat. Nanotechnol. 2009, 4, 612.
14. C. Gómez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, K. Kern, Nano Lett. 2007, 7, 3499.
15. S. Gilje, S. Han, M. Wang, K. L. Wang, R. B. Kaner, Nano Lett. 2007, 7, 3394.
16. Y. Zhou, Q. Bao, L. Tang, Y. Zhong, K. Loh, Chem. Mater. 2009, 21, 2950.
17. G. Eda, G. Fanchini, M. Chhowalla, Nat. Nanotechnol. 2008, 3, 270.
18. Z. Liu, Q. Liu, Y. Huang, Y. Ma, S. Yin, X. Zhang, W. Sun, Y. Chen, Adv. Mater. 2008, 20, 3924.
19. Q. Liu, Z. Liu, X. Zhang, N. Zhang, L. Yang, S. Yin, Y. Chen, Appl. Phys. Lett. 2008, 92, 223303.
20. X. Wang, L. Zhi, K. Müllen, Nano Lett. 2008, 8, 323.
21. J. Wu, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, P. Peumans, Appl. Phys. Lett. 2008, 92, 263302.
22. S. Ghosh, B. K. Sarker, A. Chunder, L. Zhai, S. I. Khondaker, Appl. Phys. Lett. 2010, 96, 163109.
23. V. Ryzhii, V. Mitin, M. Ryzhii, N. Ryabova, T. Otsuji, Appl. Phys. Exp. 2008, 1, 063002.
24. V. Ryzhii1, M. Ryzhii, N. Ryabova, V. Mitin, T. Otsuji, Jpn. J. Appl. Phys. 2009, 48, 04C144.
25. Z. Chen, Y. M. Lin, P. Avouris, Physica E 2007, 40, 228.
26. M. Y. Han, B. Özyilmaz, Y. Zhang, P. Kim, Phys. Rev. Lett. 2007, 98, 206805.
27. Y. M. Lin, V. Perebeinos, Z. Chen, P. Avouris, Phys. Rev. B 2008, 78, 161409.
28. X. L. Li, X. R. Wang, L. Zhang, S. W. Lee, H. J. Dai, Science 2008, 319, 1229.
29. E. McCann, Phys. Rev. B 2006, 74, 161403.
30. S. Park, J. An, I. Jung, R. D. Piner, S. J. An, X. Li, A. Velamakanni, R. S. Ruoff, Nano Lett. 2009, 9, 1593.
31. A. L. Higginbotham, D. V. Kosynkin, A. Sinitskii, Z. Sun, J. M. Tour, ACS Nano 2010, 4, 2059.
32. F. T. Vasko, V. Ryzhii, Phys. Rev. B 2007, 76, 233404.
33. P. A. George, J. Strait, J. Dawlaty, S. Shivaraman, Mvs. Chandrashekhar, F. Rana, M. G. Spencer, Nano Lett. 2008, 8, 4248.
34. F. Rana, P. A. George, J. H. Strait, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, M. G. Spencer, Phys. Rev. B 2009, 79, 115447.
35. E. J. H. Lee, K. Balasubramanian, R. T. Weitz, M. Burghard, K. Kern, Nat. Nanotechnol. 2008, 3, 486.
36. F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. Lin, J. Tsang, V. Perebeinos, P. Avouris, Nano Lett. 2009, 9, 1039.
37. T. Mueller, F. Xia, M. Freitag, J. Tsang, P. Avouris, Phys. Rev. B 2009, 79, 245430.
38. K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich, T. F. Heinz, Phys. Rev. Lett. 2008, 101, 196405.
39. L. Yang, J. Deslippe, C. Park, M. L. Cohen, S. G. Louie, Phys. Rev. Lett. 2009, 103, 186402.
40. M. I. Katsnelson, Europhys. Lett. 2008, 84, 37001.
41. A. B. Kuzmenko, E. Heumen, F. Carbone, D. Marel, Phys. Rev. Lett. 2008, 100, 117401.
42. K. F. Mak, J. Shan, T. F. Heinz, Phys. Rev. Lett. 2010, 104, 176404.
43. K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, P. Kim, Phys. Rev. Lett. 2008, 101, 096802.
44. W. Xu, F. M. Peeters, T. C. Lu, Phys. Rev. B 2009, 79, 073403.
45. A. Akturk, N. Goldsman, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices, SISPAD 2008 2008, 173, DOI: 10.1109/SISPAD.2008.4648265.
46. H. Morkoç, A. Di Carlo, P. Cingolani, Solid-State Electron. 2002, 46, 157.
47. J. P. Cheng, Y. J. Zhang, R. Y. Guo, J. Cryst. Growth 2008, 310, 57.
48. T. Ueda, Z. H. An, K. Hirakawa, S. Komiyama, J. Appl. Phys. 2008, 103, 093109.
49. X. P. Chen, H. L. Zhu, J. F. Cai, Z. Y. Wu, J. Appl. Phys. 2007, 102, 024505.
50. S. Alamaviva, M. Marinelli, E. Milani, G. Prestopino, A. Tucciarone, C. Verona, G. Verona-Rinati, M. Angelone, M. Pillon, Diamond Relat. Mater. 2009, 18, 101.