Photoelectrical response of hybrid graphene-PbS quantum dot devices

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Huang, Y Q ^a   Zhu, R J ^a,b   Kang, N ^a   Du, J ^a   Xu, H Q ^a,c  

^a PEKING UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; IV-VI SEMICONDUCTORS; LASER BEAMS; NANOCRYSTALS; QUANTUM DOT LASERS; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON OXIDES;

N TYPE SILICON; PHOTO DETECTION; PHOTOELECTRICAL MEASUREMENTS; PHOTOELECTRICAL RESPONSE; PHOTOINDUCED CHANGE; PHOTORESPONSES; QUANTUM DOT DEVICES; TRANSFER CHARACTERISTICS;

GRAPHENE DEVICES;

EID: 84885648008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824113     Document Type: Article

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