Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Tauk, R ^a   Teppe, F ^a   Boubanga, S ^a   Coquillat, D ^a   Knap, W ^a   Meziani, Y M ^b   Gallon, C ^c   Boeuf, F ^c   Skotnicki, T ^c   Fenouillet Beranger, C ^d   Maude, D K ^e   Rumyantsev, S ^f,g   Shur, M S ^f  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b TOHOKU UNIVERSITY   (Japan)

^c STMICROELECTRONICS   (France)

^d CEA LETI   (France)

^e GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^f RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^g IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTHS; NOISE EQUIVALENT POWER; PLASMA WAVE DETECTION;

DETECTORS; ELECTROMAGNETIC WAVES; MOS DEVICES; PLASMA THEORY; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 33845945367     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2410215     Document Type: Article

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