Controlling the electronic structure of bilayer graphene

Science

Volumn 313, Issue 5789, 2006, Pages 951-954

  Ohta, Taisuke ^a,b   Bostwick, Aaron ^a   Seyller, Thomas ^c   Horn, Karsten ^b   Rotenberg, Eli ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONIC EQUIPMENT; ENERGY GAP; PHOTOEMISSION; SWITCHING FUNCTIONS;

ANGLE-RESOLVED PHOTOEMISSION; CONDUCTION BAND; COULOMB POTENTIAL; ELECTRONIC BAND STRUCTURE; VALENCE BAND;

CARBON;

GRAPHITE; SILICON CARBIDE;

CARBON; ELECTRONIC EQUIPMENT; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); CONDUCTANCE; DEVICE; ELECTRONICS; FILM; PRIORITY JOURNAL; SYNTHESIS;

EID: 33747626322     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1130681     Document Type: Article

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27. This work and the Advanced Light Source were supported by the U.S. Department of Energy, Office of Basic Sciences. K.H. and T.O. were supported by the Max Planck Society and the European Science Foundation under the EUROCORES SONS programs.