The characterization and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system

IEEE Transactions on Device and Materials Reliability

Volumn 13, Issue 4, 2013, Pages 429-443

  Hurley, Paul K ^a   O'Connor, Éamon ^a   Djara, Vladimir ^a   Monaghan, Scott ^a   Povey, Ian M ^a   Long, Rathnait D ^a,b   Sheehan, Brendan ^a   Lin, Jun ^a   McIntyre, Paul C ^b   Brennan, Barry ^c   Wallace, Robert M ^c   Pemble, Martyn E ^a   Cherkaoui, Karim ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Stanford University   (United States)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

C V analysis; Characterization; Fixed oxide charges; High k; InGaAs; Interface state density; Passivation

Indexed keywords

C-V ANALYSIS; FIXED OXIDE CHARGES; HIGH-K; INGAAS; INTERFACE STATE DENSITY;

ALUMINUM; ATOMIC LAYER DEPOSITION; CHARACTERIZATION; DEFECT DENSITY; GALLIUM; INDIUM; PASSIVATION; SEMICONDUCTING INDIUM;

INTERFACE STATES;

EID: 84897802976     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2013.2282216     Document Type: Article

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