On the activation of implanted silicon ions in p-In 0.53Ga 0.47As

Semiconductor Science and Technology

Volumn 27, Issue 8, 2012, Pages

  Djara, V ^a   Cherkaoui, K ^a   Newcomb, S B ^b   Thomas, K ^a   Pelucchi, E ^a   O'Connell, D ^a   Floyd, L ^a   Dimastrodonato, V ^a   Mereni, L O ^a   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Glebe Laboratories   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CENTER POINTS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DOEHLERT DESIGN; INP; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; OHMIC BEHAVIOR; P-TYPE; SI DOPANT; SI IONS; SILICON ION; SOURCE AND DRAINS; SPECIFIC CONTACT RESISTANCES; SYSTEMATIC STUDY; TEST STRUCTURE; TRANSFER LENGTH METHODS;

ANNEALING; CONTACT RESISTANCE; DEGRADATION; ELECTRIC PROPERTIES; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84863758118     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/8/082001     Document Type: Article

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