SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 20, 2009, Pages

On the interface state density at In0.53 Ga0.47 As /oxide interfaces

(6) Brammertz, G a Lin, H C a Caymax, M a Meuris, M a Heyns, M a Passlack, M b

a IMEC (Belgium)

b NXP TSMC Research Center (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; CAPACITANCE VOLTAGE; CONDUCTION BAND DENSITY OF STATE; CONDUCTION BAND EDGE; EXPERIMENTAL DATA; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; OXIDE INTERFACES; SEMICONDUCTOR INTERFACES;

CAPACITANCE; ELECTRON MOBILITY; GRAPH THEORY;

CONDUCTION BANDS;

EID: 70450227486 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3267104 Document Type: Article

Times cited : (107)

References (16)

1
- 36149000642
- 3 as gate dielectric
- DOI 10.1109/LED.2007.906436
- Y. Xuan, Y. Q. Wu, H. C. Lin, T. Shen, and P. D. Ye, IEEE Electron Device Lett. 0741-3106 28, 935 (2007). 10.1109/LED.2007.906436 (Pubitemid 350111775)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.11 , pp. 935-938
- Xuan, Y.¹ Wu, Y.Q.² Lin, H.C.³ Shen, T.⁴ Ye, P.D.⁵

2
- 48249114071
- 0003-6951,. 10.1063/1.2956393
- T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 0003-6951 93, 033516 (2008). 10.1063/1.2956393
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033516
- Lin, T.D.¹ Chiu, H.C.² Chang, P.³ Tung, L.T.⁴ Chen, C.P.⁵ Hong, M.⁶ Kwo, J.⁷ Tsai, W.⁸ Wang, Y.C.⁹

3
- 68349127554
- 1071-1023,. 10.1116/1.3125284
- H. Zhao, J. H. Yum, Y. T. Chen, and J. C. Lee, J. Vac. Sci. Technol. B 1071-1023 27, 2024 (2009). 10.1116/1.3125284
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 2024
- Zhao, H.¹ Yum, J.H.² Chen, Y.T.³ Lee, J.C.⁴

4
- 67349183396
- 0167-9317,. 10.1016/j.mee.2009.03.112
- H. C. Lin, W. E. Wang, G. Brammertz, M. Meuris, and M. Heyns, Microelectron. Eng. 0167-9317 86, 1554 (2009). 10.1016/j.mee.2009.03.112
- (2009) Microelectron. Eng. , vol.86 , pp. 1554
- Lin, H.C.¹ Wang, W.E.² Brammertz, G.³ Meuris, M.⁴ Heyns, M.⁵

5
- 41149176589
- 10.1049/el:20080470 0167-9317;, Electronics Lett. 44, 1283 (2008). 10.1049/el:20082747
- R. J. W. Hill, R. Droopad, D. A. J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, O. Ignatova, A. Asenov, K. Rajagopalan, P. Fejes, I. G. Thayne, and M. Passlack, Electronics Lett. 44, 498 (2008) 10.1049/el:20080470 0167-9317; R. J. W. Hill, R. Droopad, D. A. J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, O. Ignatova, A. Asenov, K. Rajagopalan, P. Fejes, I. G. Thayne, and M. Passlack, Electronics Lett. 44, 1283 (2008). 10.1049/el:20082747
- (2008) Electronics Lett. , vol.44 , pp. 498
- Hill, R.J.W.¹ Droopad, R.² Moran, D.A.J.³ Li, X.⁴ Zhou, H.⁵ MacIntyre, D.⁶ Thoms, S.⁷ Ignatova, O.⁸ Asenov, A.⁹ Rajagopalan, K.¹⁰ Fejes, P.¹¹ Thayne, I.G.¹² Passlack, M.¹³ Hill, R.J.W.¹⁴ Droopad, R.¹⁵ Moran, D.A.J.¹⁶ Li, X.¹⁷ Zhou, H.¹⁸ MacIntyre, D.¹⁹ Thoms, S.²⁰ more..

6
- 58249095922
- 0038-111X.
- M. Passlack, R. Droopad, I. Thayne, and A. Asenov, Solid State Technol. 0038-111X 51, 26 (2008).
- (2008) Solid State Technol. , vol.51 , pp. 26
- Passlack, M.¹ Droopad, R.² Thayne, I.³ Asenov, A.⁴

7
- 0003610719
- (Wiley, New York),.
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1981), p. 286.
- (1981) MOS (Metal Oxide Semiconductor) Physics and Technology , pp. 286
- Nicollian, E.H.¹ Brews, J.R.²

8
- 39749167824
- On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
- DOI 10.1109/TED.2007.912365
- K. Martens, C. O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, IEEE Trans. Electron Devices 0018-9383 55, 547 (2008). 10.1109/TED.2007.912365 (Pubitemid 351297540)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.2 , pp. 547-556
- Martens, K.¹ Chui, C.O.² Brammertz, G.³ De Jaeger, B.⁴ Kuzum, D.⁵ Meuris, M.⁶ Heyns, M.M.⁷ Krishnamohan, T.⁸ Saraswat, K.⁹ Maes, H.E.¹⁰ Groeseneken, G.¹¹

9
- 70450241262
- 10.1149/1.3119560
- G. Brammertz, H. C. Lin, K. Martens, A. Alian, C. Merckling, J. Penaud, D. Kohen, W. E. Wang, S. Sioncke, A. Delabie, M. Meuris, M. Caymax, and M. Heyns, ECS Trans. 19, 375 (2009). 10.1149/1.3119560
- (2009) ECS Trans. , vol.19 , pp. 375
- Brammertz, G.¹ Lin, H.C.² Martens, K.³ Alian, A.⁴ Merckling, C.⁵ Penaud, J.⁶ Kohen, D.⁷ Wang, W.E.⁸ Sioncke, S.⁹ Delabie, A.¹⁰ Meuris, M.¹¹ Caymax, M.¹² Heyns, M.¹³

10
- 70450252542
- Proceedings of the International Electron Devices Meeting, (unpublished),.
- D. Varghese, Y. Xuan, Y. Q. Wu, T. Shen, P. D. Ye, and M. A. Alam, Proceedings of the International Electron Devices Meeting, 2008 (unpublished), p. 379.
- (2008) , pp. 379
- Varghese, D.¹ Xuan, Y.² Wu, Y.Q.³ Shen, T.⁴ Ye, P.D.⁵ Alam, M.A.⁶

11
- 70350725864
- 1938-5862,. 10.1149/1.3206612
- P. K. Hurley, É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A. J. Quinn, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. M. Vogel, R. M. Wallace, and M. E. Pemble, ECS Trans. 1938-5862 25, 113 (2009). 10.1149/1.3206612
- (2009) ECS Trans. , vol.25 , pp. 113
- Hurley, P.K.¹ O'Connor, É.² Monaghan, S.³ Long, R.D.⁴ O'Mahony, A.⁵ Povey, I.M.⁶ Cherkaoui, K.⁷ MacHale, J.⁸ Quinn, A.J.⁹ Brammertz, G.¹⁰ Heyns, M.¹¹ Newcomb, S.B.¹² Afanas'Ev, V.V.¹³ Sonnet, A.M.¹⁴ Galatage, R.V.¹⁵ Jivani, M.N.¹⁶ Vogel, E.M.¹⁷ Wallace, R.M.¹⁸ Pemble, M.E.¹⁹

12
- 0004240297
- (Dunod, Paris),.
- H. Mathieu, Physique des Semiconducteurs et des Composants Electroniques (Dunod, Paris, 2004), p. 277.
- (2004) Physique des Semiconducteurs et des Composants Electroniques , pp. 277
- Mathieu, H.¹

13
- 70450240083
- Material parameters taken from.
- Material parameters taken from: http://www.ioffe.rssi.ru/SVA/NSM/.

14
- 65949119128
- 0003-6951,. 10.1063/1.3137187
- V. V. Afanas'ev, A. Stesmans, G. Brammertz, A. Delabie, S. Sionke, A. O'Mahony, I. M. Povey, M. E. Pemble, E. O'Connor, P. K. Hurley, and S. B. Newcomb, Appl. Phys. Lett. 0003-6951 94, 202110 (2009). 10.1063/1.3137187
- (2009) Appl. Phys. Lett. , vol.94 , pp. 202110
- Afanas'Ev, V.V.¹ Stesmans, A.² Brammertz, G.³ Delabie, A.⁴ Sionke, S.⁵ O'Mahony, A.⁶ Povey, I.M.⁷ Pemble, M.E.⁸ O'Connor, E.⁹ Hurley, P.K.¹⁰ Newcomb, S.B.¹¹

15
- 36449000692
- Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
- DOI 10.1063/1.115725, PII S0003695196034080
- M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 0003-6951 68, 1099 (1996). 10.1063/1.115725 (Pubitemid 126684099)
- (1996) Applied Physics Letters , vol.68 , Issue.8 , pp. 1099-1101
- Passlack, M.¹ Hong, M.² Mannaerts, J.P.³

16
- 58149503735
- 0741-3106,. 10.1109/LED.2008.2007579
- M. Passlack, R. Droopad, P. Fejes, and L. Wang, IEEE Electron Device Lett. 0741-3106 30, 2 (2009). 10.1109/LED.2008.2007579
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 2
- Passlack, M.¹ Droopad, R.² Fejes, P.³ Wang, L.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.