Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8005-8015

  Hasegawa, H ^a   Akazawa, M ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Band alignment; Compound semiconductors; Fermi level pinning; Interface states; Surface passivation

Indexed keywords

ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); NANOELECTRONICS; PASSIVATION;

BAND ALIGNMENTS; COMPOUND SEMICONDUCTORS; FERMI LEVEL PINNING; GATE STACK FORMATION; INTERFACE CONTROL LAYER; INTERFACE STATE DENSITY; PROCESSING TECHNOLOGIES; SURFACE PASSIVATION;

INTERFACE STATES;

EID: 52949091542     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.051     Document Type: Article

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