Small-signal response of inversion layers in high-mobility In 0.53Ga0.47As MOSFETs made with thin high-κ dielectrics

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 742-748

  Ali, Ashkar ^a   Madan, Himanshu ^a   Koveshnikov, Sergei ^b   Oktyabrsky, Serge ^c   Kambhampati, Rama ^c   Heeg, Tassilo ^d   Schlom, Darrell ^e   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

^b INTEL CORPORATION   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e Department of Obstetrics Gynecology   (United States)

Author keywords

High dielectric; InGaAs; Interface states; Small signal admittance modeling; Split capacitance voltage

Indexed keywords

CAPACITANCE VOLTAGE; CHANNEL MOBILITY; COMPOUND SEMICONDUCTORS; EQUIVALENT CIRCUIT MODEL; HIGH MOBILITY; HIGH-FIELD; INTERFACE STATE; INVERSION LAYER; LOW SUPPLY VOLTAGES; MOSFETS; QUANTUM WELL; SMALL SIGNAL; SMALL-SIGNAL RESPONSE; SUBTHRESHOLD CHARACTERISTICS;

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRON TRANSPORT PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; QUANTUM CHEMISTRY; SEMICONDUCTING INDIUM; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 77950296411     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041855     Document Type: Article

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