Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit

Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

  El Kazzi, M ^a   Czornomaz, L ^a   Webb, D J ^a   Rossel, C ^a   Caimi, D ^a   Siegwart, H ^a   Fompeyrine, J ^a   Marchiori, C ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CHANNEL TRANSISTORS; ELECTRICAL MEASUREMENT; EQUIVALENT OXIDE THICKNESS; GAAS; GATE STACKS; HIGH MOBILITY; HIGH-K HFO; II-IV SEMICONDUCTORS; IN-SITU; METAL OXIDE SEMICONDUCTOR; POST-METALLIZATION ANNEALING; SILICON INTERLAYER;

CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 80051598917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615680     Document Type: Article

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