Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2 O3

Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

  Ali, A ^a   Madan, H S ^a   Kirk, A P ^b   Zhao, D A ^a   Mourey, D A ^a   Hudait, M K ^c   Wallace, R M ^b   Jackson, T N ^a   Bennett, B R ^d   Boos, J B ^d   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; C-V CHARACTERISTIC; FERMI-LEVEL UNPINNING; HIGH QUALITY; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE DEPOSITION; P-TYPE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PROCESS TEMPERATURE; SEMICONDUCTOR INTERFACES; SURFACE PREPARATION;

ATOMIC LAYER DEPOSITION; FERMI LEVEL; GALLIUM ALLOYS; PLASMA DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 77958041409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3492847     Document Type: Article

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