Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation

Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

  Kim, Eun Ji ^a   Chagarov, Evgueni ^b   Cagnon, Joël ^c   Yuan, Yu ^d   Kummel, Andrew C ^b   Asbeck, Peter M ^d   Stemmer, Susanne ^c   Saraswat, Krishna C ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of California   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; BAND GAPS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIELECTRIC LAYER; ELECTRICALLY ACTIVE DEFECTS; FERMI LEVEL PINNING; FLAT-BAND VOLTAGE; FREQUENCY-DEPENDENT CAPACITANCE; GATE METALS; II-IV SEMICONDUCTORS; IN-SITU; INTERFACE DIPOLE; LOW DENSITY; OXIDE DEPOSITION; OXIDE/SEMICONDUCTOR INTERFACES; SUBSTRATE SURFACE; TEMPERATURE DEPENDENT; VOLTAGE ANALYSIS; WEAK PERTURBATION; X RAY PHOTOELECTRON SPECTRA;

ALUMINA; ALUMINUM; CAPACITANCE; DESORPTION; ELECTRIC CURRENTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; FERMIONS; FIELD EFFECT TRANSISTORS; OXIDATION; SEMICONDUCTING INDIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSITY FUNCTIONAL THEORY;

EID: 73849108382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3266006     Document Type: Article

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