Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

Applied Physics Letters

Volumn , Issue , 1995, Pages 1099-

  Passlack, M ^a,b   Hong, M ^a   Mannaerts, J P ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b MOTOROLA INC   (United States)

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EID: 36449000692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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